Epi Structure Customizing Support

GaN-on-Si Epi Wafer Spec 1

Power Switching (8 inch, 6 inch / e-mode, d-mode)

Layer(Structure) Discription Thickness Remark
Substrate (111) Si Substrate
Substrate
Diametter
200mm (8inch)
150mm (6inch)
725 ~ 1150 μm 8" Notch, 6" Flat Zone
Buffer Higvoltage: 200 ~ 650V 2 ~ 5.5μm CustomizingAvailable
Channel GaN 150 ~ 250 nm Customizing Available
Spacer AlN ~ 1nm Customizing Available
Barrier AlGaN (18~30% Al) 12 ~ 25 nm Customizing Available
Cap p-GaN / GaN, Insitu-SiN p-GaN Cap : 80 ~ 100 nm for e-mode
SiN / GaN Cap : 1~3nm ford-mode
Customizing Available

GaN-on-Si Epi Wafer Spec 2

RF

Layer(Structure) Discription Thickness Remark
Substrate (111) Si Substrate
Substrate
Diametter
200mm (8inch)
150mm (6inch)
725 ~ 1000 μm  8" Notch
6" Flat Zone
Buffer Fe-FreeBuffer 1 ~ 3μm CustomizingAvailable
Channel GaN 150 ~ 250 nm Customizing Available
Barrier AlGaN / SiN or AlGaN/GaN for sub 6GHz
AlN/SiN, InAlN for mmW Bands
12 ~ 25 nm Customizing Available
Cap GaN,Insitu-SiN SiN /GaN Cap : 1~3nm CustomizingAvailable

GaN-on-SiC Epi Wafer Spec 1

Standard

Layer(Structure) Discription Thickness Remark
Substrate
Diametter
150.0mm (6inch)
100.0mm (4inch)
500 μm ± 25μm Flat Orientation
Buffer1 AlN 40 ~100nm  
Buffer 2 Iron (Fe) Doping 1.65 ± 0.1μm C Doping & Customizing
Available
Channel GaN 150nm CustomizingAvailable
Spacer AlN ~ 1nm Customizing Available
Barrier AlGaN (20~30% Al) 16 ~ 25 nm Customizing Available
Cap GaN / Insitu-SiN 2 ~ 5 nm Max : 5 nm

GaN-on-SiC Epi Wafer Spec 2

Buffer Free

Layer(Structure) Discription Thickness Remark
Substrate Diametter 150mm (6inch) / 100.0mm (4inch) 500 μm ± 25μm Flat
Buffer 1 AlN 20 ~ 60nm  
Channel GaN 300 ~ 600nm Customizing Available
Spacer AlN ~ 1nm Customizing Available
Barrier AlGaN (20~30% Al) 16 ~ 25 nm Customizing Available
Cap GaN / Insitu-SiN 2 ~ 5 nm Max : 5 nm

Epi Service (with advanced substrate : GaN, Diamond, etc) available

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