POWER
SEMICONDUCTOR
SiC

A “Power Semiconductor” is a semiconductor that literally controls power, characterized for “Conducting” electricity easily and working “insulator” to prevent the flow of electricity.

Basically, Power Semiconductors can be divided into 3 functions ; Amplification, Rectification, and Switching. Mostly used in Power Conversion (Changing Voltages, Frequencies), Changing DC ↔ AC, charging & suppling power grids with less power loss, providing a stable electricity source to various home appliances and electrical equipment.

Recently, Power Semiconductors are expending their application to various fields such as Electric Vehicles, Solar Power Generation, and demand is expected to increase rapidly due to the increased demand of the Industry of 4th Revolution (IT, Smart EV, Autonomous Vehicles, Robots, Solar, IoT, Smart Grid, Aerospace, 5G Communication)

In particular, the application of Power Semiconductors is expected to expand further as the importance of Energy Saving due to the Climate Crisis, so that the 3rd Generation Semiconductors, which is Compound Semiconductor (SiC, GaN) demand will be more increased.

SiC Epi Wafer

Epi Wafer (n-Type : 8” & 6”)

Item 8 inch 6 inch
Diameter 200.0mm ± 0.5mm 150.0mm ± 0.25mm
Flat / Notch Notch Flat Zone Length 47.5 mm±2.5 mm
Thickness 500 μm ± 25μm 350 μm ± 25μm
Crystal Orientation (4± 0.5)° off-axis toward <11-20> (4± 0.5)° off-axis toward <11-20>
Resistivity 0.015 ~ 0.028 Ω·cm 0.015 ~ 0.025 Ω·cm
MPD ≤0.5cm-2 ≤0.2cm-2
Buffer Layer Thickness 1μm 1μm
Buffer Layer Concentration 1.00E+18 1.00E+18
Epi Layer Concentration * 7.5E15 ~ 1.1E16 * 8E15~1.1E16
Epi Layer Thickness * 5um ~ 16um * 5um ~ 16um
Test Pattern 25 pionts,X cross 17 pionts,X cross
KDDY (2mm X 2mm) ≥ 95% ≥ 95%
TTV ≤ 20μm ≤ 15μm
WARP ≤ 70μm ≤ 50μm
Bow ± 60μm ± 40μm

* Red Color : Can be Customizing

SiC Substrate

n-Type Substrate (8” & 6”)

Item 8 inch 6 inch
Diameter 200.0mm ± 0.5mm 150.0mm ± 0.25mm
Flat / Notch Notch Flat Zone Length 47.5 mm±2.5 mm
Thickness 500 μm ± 25μm 350 μm ± 25μm
Crystal Orientation (4± 0.5)° off-axis toward <11-20> (4± 0.5)° off-axis toward <11-20>
Surface condition Polished Polished
Resistivity 0.015 ~ 0.028 Ω·cm 0.015 ~ 0.025 Ω·cm
MPD ≤0.2cm-2 ≤0.2cm-2
BPD ≤ 1500 ≤ 1500
TSD ≤ 200 ≤ 200
TTV ≤ 15μm ≤ 10μm
WARP ≤ 50μm ≤ 40μm
BOW ± 30μm ± 25μm

Semi-Insulated Substrate (6” & 4”)

Item 6 inch 4 inch
Diameter 150.0mm ± 0.2mm 99.8 ~ 100.0mm
Thickness 500 μm ± 25μm 500 μm ± 15μm
Surface Orientation <0001> ± 0.2° <0001> ± 0.2°
FWHM (0004) ≤ 80 arcsec ≤ 50 arcsec
Resistivity ≥ 1E9 Ω·cm ≥ 1E10 Ω·cm
Primary Flat Orientation {10 10} ± 1.0° {10 10} ± 5.0°
Primary Flat / Notch Notch 1.0 ~ 1.5mm Flat Zone Length 32.5 mm±1.5 mm
MPD ≤ 0.15cm-2 ≤0.3cm-2
TTV ≤ 5μm ≤ 7μm
WARP ≤ 25μm ≤ 25μm
BOW ± 15μm ± 15μm

Privacy Policy

Close

이메일무단수집거부

닫기