Hybrid W2W bonding technology

Our Hybrid wafer-to-wafer bonding technology using metal substrates is a proven technique not only in terms of characteristics, but also in yield and mass productivity.

Technology Consulting Program

In the case of special technologies such as Hybrid wafer bonding, we are actively participating in the equipment required for technical consulting and making efforts to ensure complete technology transfer.

Vertical LED process using Metal substrate
Advanced LED

· High-Power LED for Automotive, Lighting, etc.

· Micro LED

Unit process technology

· Hybrid W2W bonding technology : Core layer tech.

Wafer bonding & Laser lift-off tech. (include equipment design)

Laser scribing tech. (include equipment design)

Materials Thermal conductivity
(W/mK)
Coeff. of thermal
expansion (10-6/K)
Remark
GaN 130 5.6 III-V raw materials
GaAs 46 6.8 III-V raw materials
Al2O3 Sapphire 42 7.5 1st. Substrate, Bad heat sink capability
Si 150 3.7 Cheaper, but need to be thinning
SiC 270 4.2 Very expensive
CuW (10% Cu) 188 6.4 High tech. required on Wafer bonding,
(Laser) Scribing, Lift-off processing
MoCu 163 6.9
Mo 139 5.5

Wafer Bonding Materials

Metal substrate

Item Range
Size 6 inch, 4 inch, 2 inch
Thickness (㎛) 50 ~ 200 ± 10
Flatness (㎛) 100 ~ 250
Coeff. Of Thermal Expansion (10-6/K) 5.5 ~ 7.2
Thermal Conductivity (W/mK) 139 ~ 203
Heat Capacity (J/kgK) 170 ~ 280

Surface treatment

Description
Surface Mirror Like (鏡面), Foggy (霧面)
Surface Roughness Ra 0.01 ㎛ ~
Plating Material Cu, Cr, Ni, Sn, Au, Ag, Zn (Alloy available)
Plating Thickness 0.001㎛ ~ 3000㎛

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