CVD Reactor

Key Features

  • Horizontal Reactor with Fast Gas Switching

    2G(3x2”, 1x4”), 3G(6x2”, 1x6”), 4G(14x2”, 3x4”)

  • High Temperature Operation (up to 1400℃)
  • Automated Susceptor Loading (3G, 4G)
  • Horizontal Reactor with Fast Gas Switching

    securing crack-free AlN (essential for Deep UV)

AlN & LED Performance

  • Low Defect Density: TDD ~1x108cm-2

    Maximizing dislocation bending through fast gas switching
    enables multi-layer growth

  • Mirror-like Surface (No Crack & Pit)

    Surface Roughness(RMS): 0.3nm @ 2x2um

  • High Output Power & Long Reliability

    Po 25~32mW @ 100mA & Over 10khr @ L70 (2626mil)

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